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Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS

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Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS

Pd - Power Dissipation : 2.307kW

Td(off) : 502ns

Td(on) : 161ns

Operating Temperature : -40℃~+150℃

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 1.1nF

Input Capacitance(Cies) : 25nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.2V@12mA

Gate Charge(Qg) : 3.62uC

Pulsed Current- Forward(Ifm) : 900A

Switching Energy(Eoff) : 28.5mJ

Turn-On Energy (Eon) : 23.2mJ

Description : 2.307kW 1.2kV C2 Single IGBTs RoHS

Mfr. Part # : MG450HF12TLC2

Model Number : MG450HF12TLC2

Package : C2

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Product Overview

The MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for Vce(sat), and high short circuit capability (10s). The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.

Product Attributes

Brand: S-M449 (implied by product code)
Compliance: RoHS
Certifications: COMPLIANT RoHS

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit	Min.	Typ.	Max.
IGBT Absolute Maximum Ratings
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25	1200	V
Continuous Collector Current	IC	Tc=100	450	A
Repetitive Peak Collector Current	ICRM	tp=1ms	900	A
Gate-Emitter Voltage	VGES	Tvj=25	20	V
Total Power Dissipation	Ptot	Tc=25 Tvjmax=175	2307	W
IGBT Characteristic Values
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC=12mA,Tvj=25		V	5.2	5.8	6.4
Collector-Emitter Cut-off Current	ICES	VCE=1200V,VGE=0V,Tvj=25		mA			1.0
Collector-Emitter Saturation Voltage	VCE(sat)	Ic=450A,VGE=15V, Tvj=25		V		1.90	2.25
		Ic=450A,VGE=15V, Tvj=125		V			2.15
		Ic=450A,VGE=15V, Tvj=150		V			2.20
Gate Charge	QG		3.62	uC
Internal Gate Resistance	RGint		1.67
Input Capacitance	Cies	VCE=25V,VGE =0V, f=1MHz,Tvj=25	25	nF
Input Capacitance	Cies	VCE=25V,VGE =0V, f=1MHz,Tvj=25	25	nF
Reverse Transfer Capacitance	Cres	VCE=25V,VGE =0V, f=1MHz,Tvj=25	1.1	nF
Gate-Emitter leakage current	IGES	VCE=0 V, VGE=20V,Tvj = 25		nA			400
Turn-on Delay Time	td(on)	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	161	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	192	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	197	ns
Rise Time	tr	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	52	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	63	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	68	ns
Turn-off Delay Time	td(off)	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	502	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	536	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	543	ns
Fall Time	tf	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	96	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	135	ns
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	137	ns
Energy Dissipation During Turn-on Time	Eon	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	23.2	mJ
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	31.5	mJ
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	34.6	mJ
Energy Dissipation During Turn-off Time	Eoff	IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25	28.5	mJ
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125	44.3	mJ
		IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150	48.1	mJ
SC Data	Isc	Tp10us, VGE=15V, Tvj=150, Vcc=900V, VCEM1200V	2250	A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse Voltage	VRRM	Tvj=25	1200	V
Continuous DC Forward Current	IF		450	A
Repetitive Peak Forward Current	IFRM	tp=1ms	900	A
I2t-value	I2t	VR=0,tp=10ms,Tj=125	32000	A2s
I2t-value	I2t	VR=0,tp=10ms,Tj=150	30000	A2s
Diode Characteristic Values
Forward Voltage	VF	IF=450A,Tvj=25		V		2.10
		IF=450A,Tvj=125		V		2.15
		IF=450A,Tvj=150		V		2.17
Recovered Charge	Qrr	IF=450 A VR=600V -diF/dt=6500A/us Tvj=25	45	uC
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=125	86	uC
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=150	91	uC
Peak Reverse Recovery Current	Irr	IF=450 A VR=600V -diF/dt=6500A/us Tvj=25	383	A
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=125	453	A
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=150	461	A
Reverse Recovery Energy	Erec	IF=450 A VR=600V -diF/dt=6500A/us Tvj=25	21.2	mJ
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=125	37.2	mJ
		IF=450 A VR=600V -diF/dt=6500A/us Tvj=150	41.5	mJ
Module Characteristics
Isolation voltage	Visol	t=1min,f=50Hz	2500	V
Maximum Junction Temperature	Tjmax		175
Operating Junction Temperature	Tvj op				-40		150
Storage Temperature	Tstg				-40		125
Thermal Resistance Junction-to Case	RJC	per IGBT	0.065	K/W
Thermal Resistance Junction-to Case	RJC	per Diode	0.13	K/W
Comparative Tracking Index	CTI		>400
Thermal Resistance Case-to Sink	RCS	Conductive grease applied	0.033	K/W
Module Electrodes Torque	Mt	Recommended(M6)		Nm	3.0		5.0
Module-to-Sink Torque	Ms	Recommended(M6)		Nm	3.0		5.0
Weight of Module	G		315	g

2411220012_YANGJIE-MG450HF12TLC2_C20602007.pdf

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