Home > Single IGBTs >

IGBT module YANGJIE MG100HF12MIC1 designed for high frequency medical motion control and UPS systems

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

IGBT module YANGJIE MG100HF12MIC1 designed for high frequency medical motion control and UPS systems

Pd - Power Dissipation : 680W

Td(off) : 208ns

Td(on) : 118ns

Operating Temperature : -40℃~+150℃

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Input Capacitance(Cies) : 8.3nF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5V@4mA

Gate Charge(Qg) : 200nC@15V

Output Capacitance(Coes) : 0.29nF

Reverse Recovery Time(trr) : 110ns

Switching Energy(Eoff) : 5.62mJ

Turn-On Energy (Eon) : 2.93mJ

Description : 680W 1.2kV FS (Field Stop) Screw Terminals Single IGBTs RoHS

Mfr. Part # : MG100HF12MIC1

Model Number : MG100HF12MIC1

Package : Screw Terminals

Contact Now

Product Overview

The MG100HF12MIC1 is a high-performance IGBT module designed for demanding applications. It features high short circuit capability with self-limiting current, Trench+Field Stop IGBT technology for efficient switching, and a positive temperature coefficient for VCE(sat). The module includes fast switching and short tail current characteristics, along with free-wheeling diodes offering fast and soft reverse recovery. These attributes contribute to low switching losses, making it suitable for high frequency, medical, motion control, and UPS systems.

Product Attributes

Brand: Yangjie
Model: MG100HF12MIC1 S-M302
Certifications: RoHS Compliant
Origin: China (implied by www.21yangjie.com)

Technical Specifications

Parameter	Description	Values	Units
Absolute Maximum Ratings	Collector - Emitter Voltage (VCES)	1200	V
	Gate-Emitter Voltage (VGES)	±20	V
	DC Collector Current (IC) TC=25	150	A
	DC Collector Current (IC) TC=80	100	A
Power Dissipation	Maximum Power Dissipation (PD) (IGBT) TC = 25	680	W
Power Dissipation	Maximum Junction Temperature (TJmax)	150
Temperature Ratings	Operating Temperature (TJOP)	-40 ~ +150
Temperature Ratings	Storage Temperature (Tstg)	-40 ~ +125
Isolation Voltage	Viso (All Terminals Shorted) f=50Hz, 1min	3000	V
IGBT Electrical Characteristics	Collector-Emitter Breakdown Voltage (V(BR)CES) VGE = 0V, IC = 1mA	1200	V
	Collector Leakage Current (ICES) VCE=VCES, VGE=0V	100	uA
	Gate Leakage Current (IGES) VCE=0V, VGE=±20V	-400 ~ 400	nA
	Gate - Emitter Threshold Voltage (VGE(th)) VCE=VGE, IC=4mA	5.0 ~ 6.8	V
IGBT ON Characteristics	Collector Emitter Saturation Voltage (VCE(sat)) IC=100A,VGE=15V	1.7 ~ 1.9	V
IGBT ON Characteristics	Collector Emitter Saturation Voltage (VCE(sat)) IC=100A,VGE=15V, TJ=125C	1.9 ~ 2.1	V
IGBT Dynamic Characteristics	Input Capacitance (Cies) VCE = 25V, VGE = 0V , f100kHz	8.3	nF
IGBT Dynamic Characteristics	Output Capacitance (Coes) VCE = 25V, VGE = 0V , f100kHz	0.29	nF
IGBT Switching Characteristics (TJ = 25)	Turn-on Delay Time (td(on)) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	129	ns
	Rise Time (tr) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	27	ns
	Turn-off Delay Time (td(off)) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	276	ns
	Fall Time (Tf) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	312	ns
IGBT Switching Losses (TJ = 125)	Turn-on Switching Loss (Eon) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	3.91	mJ
IGBT Switching Losses (TJ = 125)	Turn-off Switching Loss (Eoff) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V	8.95	mJ
Gate Charge	Gate Charge (Qge) VCC=600V, IC=100A, VGE=15V	200	nC
Short Circuit Capability	Short Circuit Safe Operating Area (SCSOA) VCC = 600V, VGE ≤15V, TJ = 125	436	A (10 μs)
FWD Electrical Characteristics	Forward Voltage (VFM) IF100A, VGE = 0V TJ = 25	1.72 ~ 1.9	V
FWD Electrical Characteristics	Forward Voltage (VFM) IF100A, VGE = 0V TJ = 125	1.82 ~ 2.1	V
FWD Dynamic Characteristics	Reverse Recovery Time (trr) IF100A, di/dt =3900A/μs, Vrr = 600V, VGE = -15V TJ = 25	110	ns
FWD Dynamic Characteristics	Reverse Recovery Time (trr) IF100A, di/dt =3900A/μs, Vrr = 600V, VGE = -15V TJ = 125	197	ns
FWD Peak Reverse Recovery Current	Peak Reverse Recovery Current (Irr) TJ = 25	108	A
FWD Peak Reverse Recovery Current	Peak Reverse Recovery Current (Irr) TJ = 125	117	A
FWD Reverse Recovery Charge	Reverse Recovery Charge (Qrr) TJ = 25	5.58	μC
FWD Reverse Recovery Charge	Reverse Recovery Charge (Qrr) TJ = 125	9.25	μC
Thermal Resistance	Junction-To-Case (IGBT Part, Per Leg) (RJC)	0.17	/W
	Junction-To-Case (Diode Part, Per Leg) (RJC)	0.4	/W
	Case-To-Sink (RCS)	0.1	/W
Mounting Torque	Power Terminals Screw:M5 (Mt)	3 ~ 5	N*m
Mounting Torque	Mounting Screw:M6 (Ms)	4 ~ 6	N*m
Weight	Weight Of Module	150 ~ 160	g

2410121308_YANGJIE-MG100HF12MIC1_C781180.pdf

Wholesale IGBT module YANGJIE MG100HF12MIC1 designed for high frequency medical motion control and UPS systems from china suppliers

IGBT module YANGJIE MG100HF12MIC1 designed for high frequency medical motion control and UPS systems Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!