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Surface mount transistor Huixin MUN2233 featuring integrated bias resistor for electronic design

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Surface mount transistor Huixin MUN2233 featuring integrated bias resistor for electronic design

Output Voltage(VO(on)) : 200mV

Input Resistor : 6.1kΩ

Resistor Ratio : 0.1

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : MUN2233

Model Number : MUN2233

Package : SOT-23

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Product Description

The MUN2211 Series Bias Resistor Transistor (BRT) replaces a single transistor and its external resistor bias network by integrating a transistor with a monolithic bias resistor into a single device. This integration reduces system cost and board space. The BRT is housed in a SOT-23 package, suitable for low-power surface mount applications. It simplifies circuit design and reduces component count. The SOT-23 package features modified gull-winged leads that absorb thermal stress during soldering, preventing die damage. The device is designed for digital transistor applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: NPN Silicon
  • Color: Not specified
  • Certifications: UL 17

Technical Specifications

ParameterSymbolTest ConditionMUN2211MUN2212MUN2213MUN2214MUN2215MUN2216MUN2230MUN2231MUN2232MUN2233MUN2234MUN2235MUN2236MUN2237MUN2238MUN2240MUN2241Unit
Maximum Ratings & Thermal Characteristics
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO50V
Collector CurrentIC100mA
Peak Collector CurrentICM200mA
Total Power Dissipation @TA=25 (Note 1.)PC246mW
Derate above 251.5/W
Thermal Resistance Junction to Ambient (Note 1.)RJA508/W
Operating and Storage Temperature RangeTj, Tstg150
Maximum Temperature for Soldering Purposes, Time in Solder BathTstg-55-+150
Electrical Characteristics
Collector-Base breakdown voltageV(BR)CBOIC=10uA, IE=050V
Collector-Emitter breakdown voltage (Note2.)V(BR)CEOIC=2.0mA, IB=050V
Collector-Base cutoff currentICBOVCB=50V, IE=0100nA
Collector-Emitter cutoff currentICEOVCE=50V, IB=0500nA
Emitter-Base Cutoff currentIEBOVEB=6.0V, IC=00.500.200.100.200.901.904.302.301.500.180.130.200.050.134.000.200.10mA
DC current gainhFEVCE=10V, IC=5mA35-6060-10080-14080-140160-350160-3503.0-5.08.0-1515-3080-20080-15080-14080-15080-140160-350160-350160-350
Collector-emitter saturation voltageVCE(sat)IC=10mA, IB=0.3mA0.25V
Collector-emitter saturation voltageVCE(sat)IC=10mA, IB=5mA0.25V
Collector-emitter saturation voltageVCE(sat)IC=10mA, IB=1mA0.250.250.250.250.250.250.250.250.25V
Output voltage(on)VOLVCC=5.0V, VB=2.5V RL=1.0K0.20.20.20.20.20.20.20.20.2V
Output voltage(on)VOLVCC=5.0V, VB=5.5V RL=1.0K0.20.20.20.2V
Output voltage(on)VOLVCC=5.0V, VB=4.0V RL=1.0K0.2V
Output voltage(on)VOLVCC=5.0V, VB=3.5V RL=1.0K0.2V
Output voltage(on)VOLVCC=5.0V, VB=5.0V RL=1.0K0.20.2V
Output voltage(off)VOHVCC=5.0V, VB=0.5V RL=1.0K4.94.94.94.94.94.94.94.9V
Output voltage(off)VOHVCC=5.0V, VB=0.05V RL=1.0K4.94.94.94.9V
Output voltage(off)VOHVCC=5.0V, VB=0.25V RL=1.0K4.94.94.94.94.94.94.9V
Input resistorR1-7.0-1315.4-28.632.9-61.17.0-137.0-133.3-6.10.7-1.31.5-2.93.3-6.13.3-6.115.4-28.61.54-2.861.54-2.8632.9-61.170-13032.9-61.170-130k
Resistor ratioR1/R2-0.8-1.20.17-0.250.17-0.250.17-0.25----0.38-0.560.038-0.0560.055-0.1850.055-0.1850.38-0.560.038-0.0560.038-0.0561.7-2.60.17-0.251.7-2.60.17-0.25
Device Marking and Resistor Values
Device MarkingA8AA8BA8CA8DA8EA8FA8GA8HA8JA8KA8LA8MA8NA8PA8RA8TA8U
R1(K)10224710104.71.02.24.74.7222.22.24710047100K
R2(K)102247471.02.24.747474710022K

2509051530_Huixin-MUN2233_C51883366.pdf


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