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Jilin Sino Microelectronics JCS5N50CT 220C MOSFET featuring fast switching speed and RoHS compliance

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Jilin Sino Microelectronics JCS5N50CT 220C MOSFET featuring fast switching speed and RoHS compliance

Configuration : -

Drain to Source Voltage : 500V

Current - Continuous Drain(Id) : 5A

Operating Temperature - : -55℃~+150℃

RDS(on) : 1.6Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4.5V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 22pF

Number : 1 N-channel

Output Capacitance(Coss) : 110pF

Input Capacitance(Ciss) : 633pF

Pd - Power Dissipation : 91W

Gate Charge(Qg) : 20nC@10V

Description : 500V 5A 1.6Ω@10V 4.5V@250uA 1 N-channel 91W TO-220 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS5N50CT-220C

Model Number : JCS5N50CT-220C

Package : TO-220

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N-CHANNEL MOSFET JCS5N50T

The JCS5N50T is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	ID (A)	VDSS (V)	Rds(on)-max (@Vgs=10V) ()	Qg-typ (nC)
JCS5N50VT-V-B / JCS5N50VT-V-BR	N/A	IPAK	5	500	1.6	15
JCS5N50RT-R-B / JCS5N50RT-R-BR / JCS5N50RT-R-A / JCS5N50RT-R-AR	JCS5N50RT	DPAK	5	500	1.6	15
JCS5N50CT-C-B / JCS5N50CT-C-BR	N/A	TO-220C	5	500	1.6	15
JCS5N50FT-F-B / JCS5N50FT-F-BR	N/A	TO-220MF	5	500	1.6	15

Absolute Maximum Ratings (Tc=25)

Parameter	Symbol	Value (JCS5N50VT/RT)	Value (JCS5N50CT)	Value (JCS5N50FT)	Unit
Drain-Source Voltage	VDSS	500	500	500	V
Drain Current -continuous	ID (T=25)	5*	5*	5*	A
Drain Current -continuous	ID (T=100)	3.16*	3.16*	3.16*	A
Drain Current - pulse (note 1)	IDM	20*	20*	20*	A
Gate-Source Voltage	VGSS	30			V
Single Pulsed Avalanche Energy (note 2)	EAS	305			mJ
Avalanche Current (note 1)	IAR	5			A
Repetitive Avalanche Current (note 1)	EAR	10.1			mJ
Peak Diode Recovery dv/dt (note 3)	dv/dt	4.5			V/ns
Power Dissipation (TC=25)	PD	91	101	41	W
Power Dissipation (-Derate above 25)	-	0.73	0.81	0.33	W/
Operating and Storage Temperature Range	TJ, TSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Off-Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	500	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.53	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=500V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=400V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	3.0	-	4.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.5A	-	1.33	1.6
Forward Transconductance	gfs	VDS = 40V, ID=2.5Anote 4	-	5.5	-	S
Dynamic Characteristics
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	492	633	pF
Output capacitance	Coss	-	-	83	110	pF
Reverse transfer capacitance	Crss	-	-	16	22	pF
Switching Characteristics
Turn-On delay time	td(on)	VDD=250V,ID=5A,RG=25 note 45	-	45	60	ns
Turn-On rise time	tr	-	-	26	34	ns
Turn-Off delay time	td(off)	-	-	133	170	ns
Turn-Off Fall time	tf	-	-	214	270	ns
Total Gate Charge	Qg	VDS =400V , ID=5A VGS =10V note 45	-	15	20	nC
Gate-Source charge	Qgs	-	-	3.5	-	nC
Gate-Drain charge	Qgd	-	-	6	-	nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	5	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	20	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=5A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=5A dIF/dt=100A/s (note 4)	-	268	-	ns
Reverse recovery charge	Qrr	-	-	2.1	-	C

Thermal Characteristics

Parameter	Symbol	Max (JCS5N50VT/RT)	Max (JCS5N50CT)	Max (JCS5N50FT)	Unit
Thermal Resistance, Junction to Case	Rth(j-c)	1.38	1.23	3.08	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	110	62.5	62.5	/W

2411201840_Jilin-Sino-Microelectronics-JCS5N50CT-220C_C272531.pdf

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